160A 40V N-channel Enhancement Mode Power MOSFET D110N04 TO-252B

160A 40V N-channel Enhancement Mode Power MOSFET

1 Description 

These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard. 

2 Features 

● Fast Switching

● Low ON Resistance(Rdson≤4.5mΩ) 

● Low Gate Charge(Typ:117nC) 

● Low Reverse Transfer Capacitances(Typ:460pF) 

● 100% Single Pulse Avalanche Energy Test 

● 100% ΔVDS Test 

3 Applications 

● PWM applications 

● Load switch 

● Power management

VDSS	RDS(on)(TYP)	ID
40V	3.5mΩ	160A