 |
| Quantity: | |
|---|---|
D110N04
WXDH
TO-252B
40V
160A
160A 40V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard.
2 Features
● Fast Switching
● Low ON Resistance(Rdson≤4.5mΩ)
● Low Gate Charge(Typ:117nC)
● Low Reverse Transfer Capacitances(Typ:460pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
3 Applications
● PWM applications
● Load switch
● Power management
| VDSS | RDS(on)(TYP) | ID |
| 40V | 3.5mΩ | 160A |
160A 40V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard.
2 Features
● Fast Switching
● Low ON Resistance(Rdson≤4.5mΩ)
● Low Gate Charge(Typ:117nC)
● Low Reverse Transfer Capacitances(Typ:460pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
3 Applications
● PWM applications
● Load switch
● Power management
| VDSS | RDS(on)(TYP) | ID |
| 40V | 3.5mΩ | 160A |
