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Jiangsu Donghai Semiconductor Co., Ltd
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Model:
Balík:
V:
A:
Vybrané produktové rady:

Sic

obrazového modelu Balík v DataShet do podrobne popisuje dopyt koša
36A 1200V N-Kannel SIC Power MOSFET DCCF080M120A2 TO-247-4L DCCF080M120A2 TO-247-4L 1200 V 36a Zariadenie DCC080M120A Špecifikácia.pdf
500 V/3A Half-Bridge IPM DPQB03HB50MF ESOP-9 DPQB07HB50MFN ESOP-9 500 V 7a DPQB07HB50MFN_DATASEet_V1.0.pdf
500 V/3A Half-Bridge IPM DPQB03HB50MF ESOP-9 DPQB04HB50MF ESOP-9 500 V 4a DPQB04HB50MF_DATASEet_V1.0.pdf
500 V/3A Half-Bridge IPM DPQB03HB50MF ESOP-9 DPQB05HB50MFN ESOP-9 500 V 5a DPQB05HB50MFN_DATASEet_V1.0.pdf
500 V/3A Half-Bridge IPM DPQB03HB50MF ESOP-9 DPQB04HB50MFN ESOP-9 500 V 4a DPQB04HB50MFN_DATASEet_V1.0.pdf
500 V/3A Half-Bridge IPM DPQB03HB50MF ESOP-9 DPQB07HB50MF ESOP-9 500 V 7a DPQB07HB50MF_DATASEet_V1.0.pdf
500 V/3A Half-Bridge IPM DPQB03HB50MF ESOP-9 DPQB05HB50MF ESOP-9 500 V 5a DPQB05HB50MF_DATASEet_V1.0.pdf
500 V/3A Half-Bridge IPM DPQB03HB50MF ESOP-9 DPQB03HB50MF ESOP-9 500 V 3a DPQB03HB50MF_DATASEet_V1.0.pdf
500 V/4A Half-Bridge IPM DPQA04HB50MF SOP-11 DPQA04HB50MF SOP-11 500 V 4a DPQA04HB50MF_DATASEet_V1.0.pdf
500 V/3A Half-Bridge IPM DPQB03HB50MF ESOP-9 DPQB03HB50MFN ESOP-9 500 V 3a DPQB03HB50MFN_DATASEet_V1.0.pdf
SIC Schotty Barrier Diode 5A 1200V DCGT05D120G3 DCGT05D120G3
36A 1200V N-Kannel SIC Power MOSFET DCC080M120A TO-247-3L DCC080M120A Až 247 1200 V 36a Zariadenie DCC080M120A Špecifikácia.pdf
20MΩ 650V N-Kannel SIC Power MOSFET DCCF020M65G2 DCCF020M65G2 TO-247-4L 650V 92a DCC020M65G2 a DCCF020M65G2_DATASEEet_V1.0.pdf
5A 1700V N-Channel SIC Power MOSFET DCCF1K0M170G1 TO-247-4L DCCF1K0M170G1
18A 1200V N-Kannel SIC Power MOSFET DCC160M120G1 TO-247-3L DCC160M120G1 Až 247 1200 V 18a DCC160M120G1 a DCCF160M120G1_DATASEEet_V1.0.pdf
30MΩ 1200V N-kanál SIC Power MOSFET DCC030M120G2 TO-247-3L DCC030M120G2 Až 247 1200 V 68a DCC030M120G2_DATASEEet_v1.0.pdf
20A 650V SIC Schottky Barrier DIODE DCD20D65G4 TO-252 DCD20D65G4 Až 252b 650V 20A Zariadenie DCD20D65G4 Špecifikácia.pdf
20A 1200V SIC Schottky Barrier DIODE DCC20D120G4 TO-247-3 DCC20D120G4 Až 247 1200 V 20A Zariadenie DCC20D120G4 Špecifikácia.pdf
20A 650V SIC Schottky Barrier DIODE DCE20D65G4 TO-263 DCE20D65G4 Na 263 650V 20A Zariadenie DCE20D65G4 Špecifikácia.pdf
40A 650V SIC Schottky Barrier DIODE DCC40D65G4 TO-247-3 DCC40D65G4 Až 247 650V 40A Zariadenie DCC40D65G4 Špecifikácia.pdf

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