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F10n70

10.0a 700v N-Channel Enhancement Modus Power Mosfet
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10A 700V N-Channel Enhancement Modus Power Mosfet

I Description

Hi Silicon N-Channel Enhanced VDMOSFETS, est adeptus per se-aligned Planar technology quod reducere ad

Conduction damnum, amplio switching perficientur et augendae avalanche navitas. Quae secundum Radii vexillum.

II features

● Fast Switching

● ESD improved facultatem

● humilis in resistentia (rdson≤1.2Ω)

● Minimum porta (Typ, 34nk)

● Low Reverse Transfer Capitances (Typ: 6.2pf)

● C% unum pulsus Copyops Nectrix Energy Test

● C% Δvds test

III Applications

● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam.

● Power SWITCH CIRCUM ADAPTER et patina.


Vdss RDS (on) (Typ) Id
700V 0,96Ω 10a


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