Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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N-channel Enhancement Mode Power MOSFET 4A 800V B4N80

N-channel Enhancement Mode Power MOSFET 4A 800V
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  • B4N80

  • WXDH

N-channel Enhancement Mode Power MOSFET 4A 800V


1 Description

B4N80 , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251B, which accords with the RoHS standard. 


2 Features 

 Fast Switching 

 Low ON Resistance(Rdson≤4.0Ω)

 Low Gate Charge (Typical Data:17.3 nC) 

 Low Reverse transfer capacitances(Typical: 4.3pF)

 100% Single Pulse avalanche energy Test 


3 Applications 

 Power switch circuit of adaptor and charger.

VDSS RDS(on)(TYP)ID 
800V3.7Ω4A



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