Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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DHD3N90 TO-252B

DHD3N90 , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss,
improve switching performance and enhance the avalanche energy.
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  • DHD3N90

  • WXDH

3A 900V N-channel Enhancement Mode Power MOSFET


1 Description

DHD3N90 , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. 


2 Features 

 Fast Switching 

 Low ON Resistance(Rdson≤5.5Ω) 

 Low Gate Charge (Typical Data:17.4 nC) 

 Low Reverse transfer capacitances(Typical: 3.8pF) 

 100% Single Pulse avalanche energy Test 


3 Applications 

 Power switch circuit of adaptor and charger.


VDSS RDS(on)(TYP)ID 
900V4.8Ω3A



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