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DHD3N90
WXDH
3A 900V N-channel Enhancement Mode Power MOSFET
1 Description
DHD3N90 , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard.
2 Features
Fast Switching
Low ON Resistance(Rdson≤5.5Ω)
Low Gate Charge (Typical Data:17.4 nC)
Low Reverse transfer capacitances(Typical: 3.8pF)
100% Single Pulse avalanche energy Test
3 Applications
Power switch circuit of adaptor and charger.
| VDSS | RDS(on)（TYP) | ID |
| 900V | 4.8Ω | 3A |
3A 900V N-channel Enhancement Mode Power MOSFET
1 Description
DHD3N90 , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard.
2 Features
Fast Switching
Low ON Resistance(Rdson≤5.5Ω)
Low Gate Charge (Typical Data:17.4 nC)
Low Reverse transfer capacitances(Typical: 3.8pF)
100% Single Pulse avalanche energy Test
3 Applications
Power switch circuit of adaptor and charger.
| VDSS | RDS(on)（TYP) | ID |
| 900V | 4.8Ω | 3A |
