Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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40A 600V Fast recovery diode MUR40FU60DCT TO-3PN

40A 600V Fast recovery diode
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  • MUR40FU60DCT

  • WXDH

40A 600V Fast recovery diode


1 Description

40A, 600V Ultrafast Diodes They have a low forward voltage drop and are of planar, VBR= 600V silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. TO-220F series comply with UL standards (File ref:E252906). 


2 Features 

Low power loss

high voltage 


3 Applications

Switching Power Supply 

Power Switching Circuits 

General Purpose


VBRVF(single)(MAX)IF(AV)(single)
600V1.6V20A



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