Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
You are here: Home » Products » MOSFET » 400V-1500V N MOS » 4.8A 650V N-channel Super Junction Power MOSFET

loading

Share to:
facebook sharing button
twitter sharing button
line sharing button
wechat sharing button
linkedin sharing button
pinterest sharing button
whatsapp sharing button
sharethis sharing button

4.8A 650V N-channel Super Junction Power MOSFET

These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. Which accords with the RoHS standard.
Availability:
Quantity:
  • DHDSJ5N65/ DHBSJ5N65

  • WXDH

4.8A 650V N-channel Super Junction Power MOSFET


1 Description

These N-channel enhanced VDMOSFETs, is using advanced super junction technology and design to provide excellent Rdson with low gate charge. Which accords with the RoHS standard. 


2 Features

● Fast switching 

● Low on resistance

● Low gate charge

● Low reverse transfer capacitances 

● 100% single pulse avalanche energy test 

● 100% ΔVDS test 


3 Applications 

● Switched mode power supplies(SMPS).

● TV power & LED Lighting Power 

● AC to DC Converters 

● Telecom


VDSS RDS(on)(TYP)ID 
650V0.87Ω4.8A



Previous: 
Next: 

Product Category

Latest News

  • Jiangsu Donghai Semiconductor Co., Ltd
  • Sign up for our newsletter
  • get ready for the future
    sign up for our newsletter to get updates straight to your inbox