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10A 700V Fast recovery diode MURF1070 TO-220F-2L

10A, 700V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.
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10A 700V Fast recovery diode


1 Description

10A, 700V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. 


2 Features 

 Low power loss, 

 high efficiency Low forward voltage,

 high current capability High surge capacity 

 Super fast recovery times 

 high voltage


3 Applications 

 Switching Power Supply 

 Power Switching Circuits

 General Purpose


VBR VF(single)(MAX) IF(AV)(single)
700V 1.6V 10A



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