Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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N-channel Enhancement Mode Power MOSFET for Power Switching

The N-channel Enhancement Mode Power MOSFET for Power Switching is designed to offer superior performance in high-speed switching applications. Utilizing advanced trench technology, this MOSFET provides low on-resistance (RDS(on)), minimal gate charge, and rapid switching capabilities. It is an essential component in power switching systems, offering optimized performance for DC-DC converters and full-bridge control circuits. With features like a low reverse transfer capacitance and 100% single pulse avalanche energy testing, this MOSFET meets RoHS compliance and is ideal for power-efficient designs in industrial electronics.
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Product Details


VDSS RDS(on)(TYP) ID
68V 6.0mΩ 100A


Product Functions

This N-channel MOSFET is engineered to handle power switching with precision and efficiency. Key features include:

- Low On-Resistance (RDS(on)): Ensures minimal heat dissipation and enhances energy efficiency in power applications.

- Low Gate Charge: Minimizes switching losses, making the device highly efficient, especially in fast-switching environments like DC-DC converters.

- Fast Switching: This MOSFET is ideal for high-speed applications, with quick turn-on and turn-off times.

- Wide Operating Range: Capable of handling high voltages and currents while maintaining stable operation.


Applicable Scenarios

The N-channel Enhancement Mode Power MOSFET is ideal for use in:

- Power Switching Applications: Commonly used in switching power supplies where energy efficiency is critical.

- DC-DC Converters: Helps in the conversion of voltage levels in electronic circuits, ensuring fast response and low energy loss.

- Full Bridge Control Circuits: Perfect for motor control systems where rapid switching and efficiency are needed to drive various loads.

- Automotive Electronics: This MOSFET can be used in automotive power management systems, enhancing efficiency in electric vehicle control circuits.


Product Advantages

- Energy Efficiency: The low RDS(on) and gate charge significantly reduce power losses, making it ideal for energy-sensitive applications.

- High Durability: With advanced trench technology and materials, this MOSFET provides reliable performance even under harsh conditions, ensuring long-term usage in industrial environments.

- Versatility: Whether used in small-scale electronics or larger industrial equipment, this MOSFET adapts well to varying demands, making it a versatile choice for engineers working on power systems.

- RoHS Compliance: This ensures that the MOSFET is environmentally friendly, adhering to regulations for hazardous substances, making it safe for use in various applications.


By incorporating this N-channel Enhancement Mode Power MOSFET for Power Switching into your designs, you can achieve superior switching performance, efficiency, and reliability, especially for demanding power management applications in modern electronic systems.


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