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60A 650V Trenchstop Insulae Bipolar Transistor DGC60F65M TO-247

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60A 650V Trenchstop Insulae Bipolar Transistor DGC60F65M TO-247

60A 650V Trenchstop Insulae Porta Bipolar Transistor

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Exemplar:
DGC60F65M
Notam:
WXDH

depictio producti

60A 650V Trenchstop Insulae Bipolar Transistor

I Features

Utens DongHai fossam proprietatis designat et technologiam FS promovet, 650V FS IGBT offert superiora et mutandi opera, alta NIVIS asperitas facilem operationem parallelam.

2 Features

● FS Trench Technology, caliditas positiva coefficientis

Saturatio humilis intentione: VCE(sat), typ = 1.9V @ IC = 60A et Tj = 25°C

valde auctus facultatem NIVIS CASUS

III Applications

Welding

UPS

Tres-gradu Inverter

Vces	sarcina	Ic(Tj=100℃)
650V	TO-247	60A

Priora:

Deinde:

60A 650V Trenchstop Insulae Bipolar Transistor

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Tardus News

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Jiangsu Donghai Semiconductor Co, Ltd firmatum in December MMIV, sita ad No. LXXXVIII, Zhongtong Oriente via, Shuofang, Xinwu dolor, Wuxi urbem, Jiangsu provinciae.15000m2 ambitum tegit.Descriptio capitis est 81.5 decies centena Yuan.Productio annua linea 500 decies centena millia de habet
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Jiangsu Donghai Semiconductor Co, Ltd, quae constituta est in December MMIV, sita in No. LXXXVIII, Oriente Zhongtong Road, Shuofang Oppidum, Xinwu District, Wuxi urbem, Jiangsu provinciae.Cum area 15,000 metra quadrata et caput descripserunt 81,50 decies centena Yuan, est maior inceptis summus tech