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G50T65lbbw

50A 650V trenchstop insulatas portam bipolar Transistor
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50A 650V trenchstop insulatas portam bipolar Transistor

I Description

Using Donghai scriptor proprietary fossa consilio et progressus fs technology, 650v Higbt praebet superior

Switching operas, princeps NIVIS Avalanche Ruggedeness Securus Operatio

II features

● fs fossam technology, positivum temperatus coefficiens

● humilis saturation intentione: VCE (Sat), Typ = 1.8v @ IC = 50A et TJ = XXV °

● maxime amplificata avalanche facultatem

III Applications

● Welding

● UPS

● tres-gradu inverter

Genus

 VCE IC Vcsat, TJ = XXV ℃ Tjmax Sarcina
G50T65lbbw 650v 50A 1.8v CLXXV ℃ Ad CCXLVII


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