50A 650V Trenchstop Insulae Bipolar Transistor
1 Description
Utens DongHai fossam proprietariam designet ac FS technologiam promovet, 650V FS IGBT superior et superior offert.
mutandi spectacula alta NIVIS asperitas faciles operationes parallelae
2 Features
FS Trench Technology, caliditas positiva coefficientis
Saturatio humilis intentione: VCE(sat), typ = 1.8V @ IC = 50A et Tj = 25°C
valde auctus facultatem NIVIS CASUS
III Applications
Welding
UPS
Tres-gradu Inverter
Type |
Vce |
Ic |
Vcesat,Tj=25℃ |
Tjmax |
sarcina |
| G50T65LBBW |
650V |
50A |
1.8V |
175 |
TO-247 |