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DGC75F65M

75A 650V Trenchstop Insulae Portae Bipolar Transistor
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75A 650V Trenchstop Insulae Bipolar Transistor

Description1 

Utens DongHai fossam proprietatis designat et technologiam FS provexit, 650V FS IGBT meliorem conductionem et commutationes spectaculas praebet, altam asperitatem NIVIS et operationem facilem parallelam.

Features：

FS Trench Technology, caliditas positiva coefficientis

Saturatio humilis intentione: VCE(sat), typ = 1.7V @ IC = 75A et Tj = 25°C

valde auctus facultatem NIVIS CASUS

Applications

Welding, UPS, Tres gradus Inverter

Type

 Vce Ic Vcesat,Tj=25℃ Tjmax sarcina
DGC75F65M
 650V 75A 1.7V 175 TO-247


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