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80A 650V Trenchstop Insulae Bipolar Transistor DGC80F65M TO-247

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80A 650V Trenchstop Insulae Bipolar Transistor DGC80F65M TO-247

80A 650V Trenchstop Insulae Portae Bipolar Transistor

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DGC80F65M
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WXDH

depictio producti

80A 650V Trenchstop Insulae Bipolar Transistor

I Features

Utens DongHai fossam proprietatis designat et technologiam FS promovet, 650V FS IGBT offert superiora et mutandi opera, alta NIVIS asperitas facilem operationem parallelam.

2 Features

FS Trench Technology, caliditas positiva coefficientis

Saturatio humilis intentione: VCE(sat), typ = 1.8V @ IC = 80A et Tj = 25°C

valde auctus facultatem NIVIS CASUS

III Applications

Welding

UPS

Tres-gradu Inverter

Vces	sarcina	Ic(Tj=100℃)
650V	TO-247-3L	80A

Priora:

Deinde:

80A 650V Trenchstop Insulae Bipolar Transistor

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Tardus News

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Jiangsu Donghai Semiconductor Co, Ltd firmatum in December MMIV, sita ad No. LXXXVIII, Zhongtong Oriente via, Shuofang, Xinwu dolor, Wuxi urbem, Jiangsu provinciae.15000m2 ambitum tegit.Descriptio capitis est 81.5 decies centena Yuan.Productio annua linea 500 decies centena millia de habet
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