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Hic es: Home » Products » IGBT » 1200V-170V » 40A 1200V Trenchstop Insulae portae Bipolar Transistor G40N120D TO-247

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40A 1200V Trenchstop Insulae Bipolar Transistor G40N120D TO-247

Hae Portae Bipolar Transistor Insulae usi progressu fossae et consilio technologiae Fieldstop, providit Vcesat egregiam et celeritatem mutandi, portae humilem praefectum. Quod congruit cum RoHS vexillum.
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40A 1200V Trenchstop Insulae Porta Bipolar Transistor


I Features 

Hae portae Insulae Bipolar Transistor provectae fossae et technologiae Fieldstop consilio adhibitae sunt, praeclarum VCEsat et celeritate mutandi, portae humilis crimen. Quod congruit cum RoHS vexillum. 


2 Features 

Minimum VCEsat 

Low porta crimen 

Optima celeritate mutandi 

● Facilis parallingis capacitas ob temperamentum positivum coefficientis in VCEsat .

Tsc≥10µs 

Fast recuperatio plena vena anti-parallel diode 


III Applications 

Welding 

UPS 

Tres-gradu Inverter


Vces sarcina Ic(Tj=100℃)
1200V TO-247-3L 40A 


download G40N120D - DHB.pdf

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IGBT IGBT Singulus Trenchstop IGBT 40A1200V IGBT 40A1200V Trenchstop IGBT
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