(1)(8) (1)
porta
Jiangsu Donghai Semiconductor Co., Ltd
Hic es: Home » Products » MOSFET » 12V-300V N MOS » 270A 120V N-canali Enhancement Modus Power MOSFET DHS044N12U TOLL PACKAGE

loading

Share to:
facebook sharing button
Twitter sharing button
linea participatio puga
wechat sharing button
sharingin button sharing
pinterest sharing button
whatsapp sharing button
sharethis sharing button

270A 120V N-canale Enhancement Modus Power MOSFET DHS044N12U TOLL PACKAGE

Hi N-channel amplificationis modus potentiae mosfets provectus usus est ad portam fossae fossae technologiae designatae, providit Rdson et portae minoris crimen. Quod congruit cum RoHS vexillum.
Availability:
Quantity:
inquire Add to Basket

270A 120V N-canale Enhancement Modus Power MOSFET

1 Description 

Hoc N-canale amplificationis modus potentia MOSFET provectae technologiae Spalatensis portae Trench utitur, quae Rdson et portam humilem simul praefectum praebet. Quod congruit cum RoHS vexillum. 


2 Features 

Minimum resistente 

Maximum crimen porta 

Fast commutatione

Minimum vicissim translationis capacitates

C% unius pulsus NIVIS industria test 

C% VDS test


III Applications 

Synchroni rectificationem in SMPS 

Motor imperium ac coegi 

Pugna procuratio

UPS 

Power instrumenta


VDSS RDS(on)(TYP) ID
120V 2.7mΩ 270A


Priora: 
Next: 
MOSFET
  • Jiangsu Donghai Semiconductor Co., Ltd
  • Sign up for our newsletter
  • expediret pro futuro
    signo pro nostris newsletter accipere updates recta in capsa tua
    Submit
Copyright © 2023Jiangsu Donghai Semiconductor Co., Ltd Technology by leadong.com