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DHS095N06/DHS095N06F/ DHS095N06E/DHS095N06B/DHS095N06D
WXDH
N-channel Enhancement Mode Power MOSFET 80A 60V
1 Description
These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Synchronous rectification for AC/DC quick charger
● Power tools
● UPS(Uninterrupible Power Supplies)
● Motor control
● Battery management
VDSS | RDS(on)(TYP) | ID |
60V | 8.3mΩ | 80A |
N-channel Enhancement Mode Power MOSFET 80A 60V
1 Description
These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Synchronous rectification for AC/DC quick charger
● Power tools
● UPS(Uninterrupible Power Supplies)
● Motor control
● Battery management
VDSS | RDS(on)(TYP) | ID |
60V | 8.3mΩ | 80A |