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DH027N06/DHF027N06/ DHE027N06/DH027N06D/DH027N06B
WXDH
N-channel Enhancement Mode Power MOSFET 210A 60V
1 Description
These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Switching power supply
● Inverter power management system
● Power tool control
● Automotive electronics applications
VDSS | RDS(on)(TYP) | ID |
60V | 2.7mΩ | 210A |
N-channel Enhancement Mode Power MOSFET 210A 60V
1 Description
These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Switching power supply
● Inverter power management system
● Power tool control
● Automotive electronics applications
VDSS | RDS(on)(TYP) | ID |
60V | 2.7mΩ | 210A |