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| Quantity: | |
|---|---|
DH10H055R/DHF10H055R/ DHE10H055R
WXDH
N-channel Enhancement Mode Power MOSFET 120A 100V
1 Description
These N-channel enhancement mode power MOSFETS Used advanced Splite Gate technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard.
2 Features
● Fast Switching
● Low On Resistance
● Low Gate Charge
● High avalanche Current
● Low Reverse Transfer Capacitances
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
3 Applications
● Switching power supply
● Inverter power management system
● Power tool control
● Automotive electronics applications
| VDSS | RDS(on)(TYP) | ID |
| 100V | 5.5mΩ | 120A |
N-channel Enhancement Mode Power MOSFET 120A 100V
1 Description
These N-channel enhancement mode power MOSFETS Used advanced Splite Gate technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard.
2 Features
● Fast Switching
● Low On Resistance
● Low Gate Charge
● High avalanche Current
● Low Reverse Transfer Capacitances
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
3 Applications
● Switching power supply
● Inverter power management system
● Power tool control
● Automotive electronics applications
| VDSS | RDS(on)(TYP) | ID |
| 100V | 5.5mΩ | 120A |
