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DSP037N08N3
WXDH
235A 30V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Power switching application
● DC-DC Converters
● Full bridge control
| VDSS | RDS(on)(TYP) | ID |
| 80V | 3.4mΩ | 100A |
235A 30V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Power switching application
● DC-DC Converters
● Full bridge control
| VDSS | RDS(on)(TYP) | ID |
| 80V | 3.4mΩ | 100A |
