Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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DSP037N08N3 DFN5X6

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
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  • DSP037N08N3

  • WXDH

235A 30V N-channel Enhancement Mode Power MOSFET


1 Description 

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. 


2 Features

● Low on resistance 

● Low reverse transfer capacitances 

● 100% single pulse avalanche energy test 

● 100% ΔVDS test 

  • Pb-free plating/Halogen-Free/RoHs compliant


3 Applications

● Power switching application

● DC-DC Converters

● Full bridge control



VDSSRDS(on)(TYP)ID
80V3.4mΩ100A


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