Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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DSG070N10L3 TO-220

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
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  • DSG070N10L3

  • WXDH

100V/5.9mΩ/100A N-MOSFET


1 Description 

This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard. 


2 Features 

● Low on resistance 

● Low reverse transfer capacitances

● 100% single pulse avalanche energy test 

● 100% ΔVDS test

● Pb-Free plating / Halogen-Free / RoHS compliant


3 Applications 

• Motor Control and Drive 

• Charge/Discharge for Battery Management System 

• Synchronous Rectifier for SMPS


VDSSRDS(on)(TYP)ID
100V5.9mΩ100A


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