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DSG070N10L3
WXDH
100V/5.9mΩ/100A N-MOSFET
1 Description
This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
● Pb-Free plating / Halogen-Free / RoHS compliant
3 Applications
• Motor Control and Drive
• Charge/Discharge for Battery Management System
• Synchronous Rectifier for SMPS
| VDSS | RDS(on)(TYP) | ID |
| 100V | 5.9mΩ | 100A |
100V/5.9mΩ/100A N-MOSFET
1 Description
This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
● Pb-Free plating / Halogen-Free / RoHS compliant
3 Applications
• Motor Control and Drive
• Charge/Discharge for Battery Management System
• Synchronous Rectifier for SMPS
| VDSS | RDS(on)(TYP) | ID |
| 100V | 5.9mΩ | 100A |
