Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
You are here: Home » Products » MOSFET » 12V-300V N MOS » DSG045N14N TO-220

loading

Share to:
facebook sharing button
twitter sharing button
line sharing button
wechat sharing button
linkedin sharing button
pinterest sharing button
whatsapp sharing button
sharethis sharing button

DSG045N14N TO-220

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
Availability:
Quantity:
  • DSG045N14N

  • WXDH

180A 135V N-channel Enhancement Mode Power MOSFET


1 Description 

This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard. 


2 Features

● Low on resistance 

● Low gate charge 

● Fast switching

● Low reverse transfer capacitances 

● 100% single pulse avalanche energy test

● 100% ΔVDS test 


3 Applications 

● Motor control and drive 

● Battery management 

● UPS (Uninterrupible Power Supplies)


VDSSRDS(on)(TYP)ID
135V3.9 mΩ180A


Previous: 
Next: 

Product Category

Latest News

  • Jiangsu Donghai Semiconductor Co., Ltd
  • Sign up for our newsletter
  • get ready for the future
    sign up for our newsletter to get updates straight to your inbox