Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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DSG045N14N TO-220

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
  • DSG045N14N

  • WXDH

180A 135V N-channel Enhancement Mode Power MOSFET

1 Description 

This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard. 

2 Features

● Low on resistance 

● Low gate charge 

● Fast switching

● Low reverse transfer capacitances 

● 100% single pulse avalanche energy test

● 100% ΔVDS test 

3 Applications 

● Motor control and drive 

● Battery management 

● UPS (Uninterrupible Power Supplies)

135V 3.9 mΩ 180A

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