Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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DSE058N15NA TO-263

These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
Availability:
Quantity:
  • 50N06/F50N06/E50N06/B50N06/D50N06

  • WXDH

60A 68V N-channel Enhancement Mode Power MOSFET


1 Description 

These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. 


2 Features 

● Low on resistance

● Low gate charge 

● Fast switching 

● Low reverse transfer capacitances 

● 100% single pulse avalanche energy test 

● 100% ΔVDS test 


3 Applications 

● Power switching applications

● DC-DC converters 

● Full bridge control

VDSSRDS(on)(TYP)ID
68V10.5mΩ60A


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