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DSE043N14N
WXDH
180A 135V N-channel Enhancement Mode Power MOSFET
1 Description
This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Motor control and drive
● Battery management
● UPS (Uninterrupible Power Supplies)
| VDSS | RDS(on)(TYP) | ID |
| 135V | 3.7mΩ | 180A |
180A 135V N-channel Enhancement Mode Power MOSFET
1 Description
This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Motor control and drive
● Battery management
● UPS (Uninterrupible Power Supplies)
| VDSS | RDS(on)(TYP) | ID |
| 135V | 3.7mΩ | 180A |
