Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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DSE026N10N3A TO-263

These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
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  • DSE026N10N3A

  • WXDH

100V/2.2mΩ/180A N-MOSFET


1 Description 

These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. 


2 Features 

● Low on resistance 

● Low reverse transfer capacitances 

● 100% single pulse avalanche energy test 

● 100% ΔVDS test 

● Pb-Free plating / Halogen-Free / RoHS compliant


3 Applications 

• Power switching applications

• DC-DC converters 

• Full bridge control

• Automotive applications


VDSSRDS(on)(TYP)ID
100V2.2 mΩ180A


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