Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
You are here: Home » Products » MOSFET » 12V-300V N MOS » 9A 200V N-channel Enhancement Mode Power MOSFET 630/F630/E630/B630/D630

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9A 200V N-channel Enhancement Mode Power MOSFET 630/F630/E630/B630/D630

9A 200V N-channel Enhancement Mode Power MOSFET
Availability:
Quantity:
  • 630/F630/E630/B630/D630

  • WXDH

9A 200V N-channel Enhancement Mode Power MOSFET


1 Description

These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 


2 Features 

● Fast switching

● Low on resistance(Rdson≤0.28Ω)

● Low gate charge(Typ: 12.6nC) 

● Low reverse transfer capacitances(Typ: 8.8pF) 

● 100% single pulse avalanche energy test 

● 100% ΔVDS test 


3 Applications

● High efficiency switch mode power supplies. 

● Power switch circuit of adaptor and charger. 

● UPS

● Inverter


VDSS RDS(on) (TYP) ID 
200V 0.23Ω 9A



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