Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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60A 600V Fast recovery diode MUR6060BCT

60A, 600V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.
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  • WXDH

60A 600V Fast recovery diode


1 Description 60A, 600V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor 


2 Features 

 Low power loss, 

 high efficiency Low forward voltage, 

 high current capability High surge capacity 

 Super fast recovery times 

 high voltage 


3 Applications 

 Switching Power Supply 

 Power Switching Circuits 

 General Purpose

VBRVF(single)(MAX)IF(AV)(single)
600V2.0V30A



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