Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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210A 60V N-channel Enhancement Mode Power MOSFET N6005/FN6005/EN6005

These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
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  • N6005/FN6005/EN6005

  • WXDH

210A 60V N-channel Enhancement Mode Power MOSFET


1 Description 

These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. 


2 Features 

● Low on resistance

● Low gate charge 

● Fast switching

● Low reverse transfer capacitances 

● 100% single pulse avalanche energy test 

● 100% ΔVDS test 


3 Applications 

● Switching power supply 

● Inverter power management system 

● Power tool control 

● Automotive electronics applications


VDSS RDS(on)(TYP) ID
60V 2.7mΩ 210A


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