200V/11mΩ/110A N-MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● AEC-Q101 qualified
● Low on resistance
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
• Pb-Free plating / Halogen-Free / RoHS compliant
3 Applications
● Power switching applications
● DC-DC converters
● Full bridge control
VDSS |
RDS(on)(TYP) |
ID |
200V |
11mΩ |
110A |