Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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180A 135V N-channel Enhancement Mode Power MOSFET

This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard.
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Quantity:
  • DSG052N14N/DSE050N14N

  • WXDH

180A 135V N-channel Enhancement Mode Power MOSFET


1 Description

This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard. 


2 Features 

● Low on resistance 

● Low gate charge 

● Fast switching 

● Low reverse transfer capacitances 

● 100% single pulse avalanche energy test 

● 100% ΔVDS test 


3 Applications 

● Motor control and drive 

● Battery management 

● UPS (Uninterrupible Power Supplies)

VDSSRDS(on)(TYP)IDPACKAGE
135V3.9mΩ180ATO-220C
135V3.7mΩ180ATO-263


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