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| Quantity: | |
|---|---|
DSG033N10NA / DSE031N10NA
WXDH
180A 100V N-channel Enhancement Mode Power MOSFET
1 Description
This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
● AEC-Q101 qualified
3 Applications
● Motor control and drive
● Battery management
● UPS (Uninterrupible Power Supplies)
| VDSS | RDS(on)(TYP) | ID |
| 100V | 3 mΩ | 180A |
180A 100V N-channel Enhancement Mode Power MOSFET
1 Description
This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
● AEC-Q101 qualified
3 Applications
● Motor control and drive
● Battery management
● UPS (Uninterrupible Power Supplies)
| VDSS | RDS(on)(TYP) | ID |
| 100V | 3 mΩ | 180A |
