160A 120V N-channel Enhancement Mode Power MOSFET
1 Description
This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Synchronous rectification in SMPS
● Motor control and drive
● Battery management
● UPS
● Power tools
VDSS |
RDS(on)(TYP) |
ID |
120V |
3.7mΩ |
160A |