Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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120A100V N-channel Enhancement Mode Power MOSFET

These N-channel enhancement mode power MOSFETS Used advanced Split Gate technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard.
Availability:
Quantity:
  • D120N10ZR/FD120N10ZR /ED120N10ZR

  • WXDH

120A100V N-channel Enhancement Mode Power MOSFET


1 Description

These N-channel enhancement mode power MOSFETS Used advanced Split Gate technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard. 


2 Features 

● Low On Resistance 

● Low Gate Charge 

● Excellent Qg×Rdson Product(FOM) 

● Fast Switching

● Low Reverse Transfer Capacitances 

● 100% Single Pulse Avalanche Energy Test 

● 100% ΔVDS Test 


3 Applications 

● Motor Control and Drive 

● Battery Management 

● UPS(Uninteruptible Power Supply)


VDSSRDS(on)(TYP)ID
100V3.3mΩ120A


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