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| Quantity: | |
|---|---|
DH10H037R/DHF10H037R/ DHE10H037R
WXDH
120A 100V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhancement mode power MOSFETS Used advanced Splite Gate technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard.
2 Features
● Fast Switching
● Low On Resistance
● Low Gate Charge
● High avalanche Current
● Low Reverse Transfer Capacitances
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
3 Applications
● Switching power supply
● Inverter power management system
● Power tool control
● Automotive electronics applications
| VDS | RDS(on)typ. | ID |
| 100V | 3.7mΩ | 120A |
120A 100V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhancement mode power MOSFETS Used advanced Splite Gate technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard.
2 Features
● Fast Switching
● Low On Resistance
● Low Gate Charge
● High avalanche Current
● Low Reverse Transfer Capacitances
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
3 Applications
● Switching power supply
● Inverter power management system
● Power tool control
● Automotive electronics applications
| VDS | RDS(on)typ. | ID |
| 100V | 3.7mΩ | 120A |
