Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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10A 1200V Fast recovery diode MURE10120CT

10A 1200V Fast recovery diode
  • MURE10120CT

  • WXDH

10A 1200V Fast recovery diode

1 Description

10A, 1200V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/clamping diodes and rectififiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor

2 Features 

 Low power loss, 

 high efficiency Low forward voltage, 

 high current capability High surge capacity 

 Super fast recovery times 

 high voltage 

3 Applications 

 Switching Power Supply 

 Power Switching Circuits 

 General Purpose

VBR VF(single)(MAX) IF(AV)(single)
1200V 2.5V 10A

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