Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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105A 68V N-channel Enhancement Mode Power MOSFET DHS055N07/ DHS055N07E /DHS055N07D

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
Availability:
Quantity:
  • DHS055N07/ DHS055N07E /DHS055N07D

  • WXDH

105A 68V N-channel Enhancement Mode Power MOSFET


1 Description 

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. 


2 Features

● Fast switching 

● Low on resistance 

● Low gate charge 

● High avalanche current 

● Low reverse transfer capacitances

● 100% single pulse avalanche energy test

● 100% ΔVDS test 


3 Applications 

● Synchronous rectification in SMPS 

● Hard switching and high speed circuit

● Power tools

● UPS 

● Motor control

VDSS RDS(on)(TYP) ID
68V 5.7mΩ 105A


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