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DSD065N10L3A
WXDH
TO-252B
100V
100A
100V/5.5mΩ/100AN-MOSFET
1 Description
The N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● AEC-Q101 qualified
● Low on resistance
● Pb-Free plating / Halogen-Free / RoHS compliant
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Motor control and drive
● Charge/Discharge for Battery Management System
● Synchronous Rectifier for SMPS
Automotive application
VDSS | RDS(on)(TYP) | ID |
100V | 5.5mΩ | 100A |
100V/5.5mΩ/100AN-MOSFET
1 Description
The N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● AEC-Q101 qualified
● Low on resistance
● Pb-Free plating / Halogen-Free / RoHS compliant
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Motor control and drive
● Charge/Discharge for Battery Management System
● Synchronous Rectifier for SMPS
Automotive application
VDSS | RDS(on)(TYP) | ID |
100V | 5.5mΩ | 100A |