Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
You are here: Home » Products » MOSFET » 12V-300V N MOS » 100V/5.5mΩ/100AN-MOSFET DSD065N10L3A TO-252

loading

Share to:
facebook sharing button
twitter sharing button
line sharing button
wechat sharing button
linkedin sharing button
pinterest sharing button
whatsapp sharing button
sharethis sharing button

100V/5.5mΩ/100AN-MOSFET DSD065N10L3A TO-252

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
Availability:
Quantity:

100V/5.5mΩ/100AN-MOSFET


1 Description 

The N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. 


2 Features 

● AEC-Q101 qualified

● Low on resistance 

● Pb-Free plating / Halogen-Free / RoHS compliant

● Low reverse transfer capacitances 

● 100% single pulse avalanche energy test 

● 100% ΔVDS test 


3 Applications 

● Motor control and drive 

● Charge/Discharge for Battery Management System

● Synchronous Rectifier for SMPS

  • Automotive application


VDSS RDS(on)(TYP) ID
100V 5.5mΩ 100A


Previous: 
Next: 
  • Sign up for our newsletter
  • get ready for the future
    sign up for our newsletter to get updates straight to your inbox