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You are here: In domo » Productus » Igbt » 600v, 650v » 650V 650V TRANSTOP insulatas portam Bipolar Transistor DGC60F65M ad CCXLVII

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650V 650V trenchstop insulatas portam bipolar Transistor dgc60f65m ad-CCXLVII

Using Donghai scriptor proprietary fossam consilio et progressus fs technology, 650v fs igbt praebet superior et switching facienda, princeps NIVIS Avalanche Ruggedenfy Securus Parallela Operatio
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60a 650V trenchstop insulatas portam bipolar Transistor


I features 

Using Donghai scriptor proprietary fossa consilio et progressus fs technology, 650v fs igbt offert superior et switching operas, princeps NIVIS Avalanche Ruggedenfo 


II features

● fs fossam technology, positivum temperatus coefficiens 

● humilis saturation intentione: VCE (Sat), Typ = 1.9v @ IC = 60A et TJ = XXV ° 

● maxime amplificata avalanche facultatem 


III Applications

● Welding 

● UPS 

● tres-gradu inverter

Vces Sarcina IC (TJ = C ℃)
650v Ad CCXLVII 60a 


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