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Hic es: Home » Products » IGBT » 1200V-170V » 40A 1200V Trenchstop Insulae portae Bipolar Transistor DGC40F120M2 TO-247

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40A 1200V Trenchstop Insulae Bipolar Transistor DGC40F120M2 TO-247

Hae Portae Bipolar Transistor Insulae usi progressu fossae et consilio technologiae Fieldstop, providit Vcesat egregiam et celeritatem mutandi, portae humilem praefectum. Quod congruit cum RoHS vexillum.
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40A 1200V Trenchstop Insulae Porta Bipolar Transistor


I Features 

Hae Portae Bipolar Transistor Insulae usi progressu fossae et consilio technologiae Fieldstop, providit Vcesat egregiam et celeritatem mutandi, portae humilem praefectum. Quod congruit cum RoHS vexillum. 


2 Features

Minimum Vcesat 

Low porta crimen 

Optima celeritate mutandi 

● Facilis parallelis capacitas ob temperaturam positivam coefficientis in Vcesat

Tsc≥6µs

Fast recuperatio plena vena anti-parallel diode 


III Applications 

Welding 

UPS 

Tres-gradu Inverter


Vces sarcina Ic(Tj=100℃)
1200V TO-247-3L 40A 


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Porta Bipolar Transistor insulata
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