porta
Jiangsu Donghai Semiconductor Co., Ltd
Hic es: Home » Products » MOSFET » 12V-300V N MOS » 120A 100V N-canali Enhancement Modus Potestatis MOSFET DH10H037R TO-220C

loading

Share to:
facebook sharing button
Twitter sharing button
linea participatio puga
wechat sharing button
sharingin button sharing
pinterest sharing button
whatsapp sharing button
sharethis sharing button

120A 100V N-alveus Enhancement Modus Power MOSFET DH10H037R TO-220C

120A 100V N-canali Enhancement Modus Power MOSFET
Availability:
Quantity:

120A 100V N-canale Enhancement Modus Power MOSFET


1 Description 

Haec N-canali amplificatio modus potentiae MOSFETS provectae Splite Porta technicae artis designatio, RDSON et humilis porta crimen praestans. Quod congruit cum RoHS vexillum. 


2 Features 

Fast Switching 

Minimum Resistentia 

Porta Low præcipe

Maximum montem cadentem; 

Low Reverse Transfer Capacitances 

C% Singulus Pulsus NIVIS Energy Test 

C% VDS Test 


III Applications

Switching potentia copia

potestas administrationis systematis inverto

instrumentum potestatis potestate 

Automotive applications electronics


VDS RDS(on)typ. ID
100V 3.7mΩ 120A


Priora: 
Next: 
  • Sign up for our newsletter
  • expediret pro futuro
    signo pro nostris newsletter accipere updates recta in capsa tua