ປະຕູ
Jiangsu Donghai Semiconductor Co., Ltd
ເຈົ້າຢູ່ທີ່ນີ້: ບ້ານ » ຜະລິດຕະພັນ » SIC

 

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SIC

ຮູບພາບ ແບບ ຊຸດຕົວ V A ສານ ລາຍລະອຽດເອກະ ສອບຖາມ ເພີ່ມໃສ່ກະຕ່າ
41A 650V N-channel SIC Power MOSFET DCCF060M65G2 TO-247 DCCF060M65G2 TO-247-4L 650V 41 ກ Donghai_DCC060M65G2&DCCF060M65G2_Datasheet_V1.0.pdf
500V/5A ຂົວເຄິ່ງ IPM DPQA05HB50MF SOP-11 DPQA05HB50MF SOP-11 500V 5A Donghai_DPQA05HB50MF_datasheet_V1.0.pdf
1200V/16mΩ/110A SiC MOSFET DCCF016M120G3 TO-247-4L DCCF016M120G3 TO-247-4L 1200V 110A Donghai_DCCF016M120G3_datasheet_V1.0(1).pdf
20A 650V SiC Schottky Barrier Diode DCCT20D65G4 TO-247-2L DCCT20D65G4 TO-247-2L 650V 20A ອຸປະກອນ DCCT20D65G4 Specification.pdf
500V/4A ຂົວເຄິ່ງ IPM DPQA04HB50MF SOP-11 DPQA04HB50MF SOP-11 500V 4A Donghai_DPQA04HB50MF_datasheet_V1.0.pdf
40mΩ 650V N-channel SiC Power MOSFET DCCF040M65G2 TO-247-4L DCCF040M65G2 TO-247-4L 650V 52 ກ Donghai_DCC040M65G2&DCCF040M65G2_Datasheet_V1.0.pdf
120A 1200V N-channel SIC Power MOSFET DCC016M120G2 / DCCF016M120G2 DCC016M120G2 ເຖິງ-247 1200V 120A Donghai_DCC016M120G2&DCCF016M120G2_Datasheet_V1.0.pdf
36A 1200V N-channel SIC Power MOSFET DCCF080M120A2 TO-247-4L DCCF080M120A2 TO-247-4L 1200V 36 ກ ອຸປະກອນ DCC080M120A Specification.pdf
25A 1700V SiC Schottky Barrier Diode DCCT25D170G1 TO-247-2L 1700V 25 ກ ອຸປະກອນ DCCT25D170G1 Specification.pdf
DCC040M120A2
1200V/16mΩ/110A SiC MOSFET DCC016M120G3 TO-247 DCC016M120G3 ເຖິງ-247 1200V 110A Donghai_DCC016M120G3_datasheet_V1.0.pdf
36A 1200V N-channel SIC Power MOSFET DCC080M120A TO-247-3L DCC080M170G2 ເຖິງ-247 1700V 37 ກ Donghai_DCC080M170G2_Datasheet_V1.0.pdf
68A 1200V N-channel SIC Power MOSFET DCC040M170G2 TO-247-3 1700V 67A Donghai_DCC040M170G2_Datasheet_V1.0(1).pdf
20A 650V SiC Schottky Barrier Diode DCD20D65G4 TO-252 DCD20D65G4 TO-252B 650V 20A ອຸປະກອນ DCD20D65G4 Specification.pdf
20A 650V SiC Schottky Barrier Diode DCE20D65G4 TO-263 DCE20D65G4 TO-263 650V 20A ອຸປະກອນ DCE20D65G4 Specification.pdf
30mΩ 1200V N-channel SiC Power MOSFET DCCF030M120G2 TO-247-4L DCCF030M120G2
8A 650V SiC Schottky Barrier Diode DCE08D65G4 TO-263 DCE08D65G4 TO-263 650V 8A ອຸປະກອນ DCE08D65G4 Specification.pdf
40mΩ 650V N-channel SiC Power MOSFET DCC040M65G2 TO-247 DCC040M65G2 ເຖິງ-247 650V 52 ກ Donghai_DCC040M65G2&DCCF040M65G2_Datasheet_V1.0.pdf
20A 650V SiC Schottky Barrier Diode DCC20D65G4 TO-247-3 DCC20D65G4 ເຖິງ-247 650V 20A ອຸປະກອນ DCC20D65G4 Specification.pdf
10A 650V SiC Schottky Barrier Diode DCD10D65G4 TO-252B 650V 10A ອຸປະກອນ DCD10D65G4 Specification.pdf

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