F11n70

12a 700v N-Channel Enhancement Modus Power Mosfet

I Description

Hi Silicon N-Channel Enhanced VDMOSFETS, est adeptus per se-aligned Planar technology quod reducere ad

Conduction damnum, amplio switching perficientur et augendae avalanche navitas. Quae secundum Radii vexillum.

II features

● Fast Switching

● ESD improved facultatem

● humilis in resistentia (rdson≤0.9Ω)

● Minimum porta (Typ: 38nc)

● Low Reverse Transfer Capitances (Typ, 7.0pf)

● C% unum pulsus Copyops Nectrix Energy Test

● C% Δvds test

III Applications

● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam.

● Power SWITCH CIRCUM ADAPTER et patina.