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DGC60F65M

60A 650V Trenchstop Insulae Porta Bipolar Transistor
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60A 650V Trenchstop Insulae Bipolar Transistor

Description1 

Trench consilio usus DongHai et technologiae FS provectae, 650V FS IGBT meliorem conductionem et commutationes spectaculas praebet, altam asperitatem NIVIS et operationem facilem parallelam.

Features:

FS Trench Technology, caliditas positiva coefficientis

Saturatio humilis intentione: VCE(sat), typ = 1.9V @ IC = 60A et Tj = 25°C

valde auctus facultatem NIVIS CASUS

Applications

Welding, UPS, Tres gradus Inverter

Type

Vce Ic Vcesat,Tj=25℃ Tjmax sarcina
DGC60F65M
650V 60A 1.9V 175 TO-247


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