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Hic es: Home » Products » MOSFET » 400V-1500V N MOS » 50A 650V Trenchstop Insulae Porta Bipolar Transistor G50T65D TO-3PN

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50A 650V Trenchstop Insulae Bipolar Transistor G50T65D TO-3PN

Utens DongHai fossam proprietatis designans et technologiam FS promovens, 650V FS IGBT offert superiora et mutandi spectacula, alta NIVIS asperitas faciles parallelas operationes
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  • G50T65D

  • WXDH

  • TO-3PN

  • G50T65D .pdf

  • 650V

  • 50A

50A 650V Trenchstop Insulae Bipolar Transistor

1 Description 


Utens DongHai fossam proprietariam designat et FS technologiam promovet, 650V FS IGBT actiones meliores et commutationes praebet, altae NIVIS asperitas facilem operationem parallelam. 


2 Features 

FS Trench Technology, caliditas positiva coefficientis 

Saturatio humilis intentione: VCE(sat), typ = 2.0V @ IC = 50A et Tj = 25°C 

valde auctus facultatem NIVIS CASUS 


III Applications 

Welding 

UPS 

Tres-gradu Inverter



Vces Vcesat,Tj=25℃ Ic
650V 2.0V 50A


download Fabrica DHG50T65D Specification(TO-3PN).pdf

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