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Mur6030bct
Wxdh
60a 300v ieiunium recuperatio diode
I Description
60a, 300v usquequatfast Diodes habent humilem deinceps voltas gutta et de Planar, Silicon Nitride passivated, Ion-implantata, epitaxial constructione. His cogitationes in animo usu ut industria steering / clamping Diodes et rectifiers in varietate switching potentia commeatus et alia potentia switching applications. Minimum recuperatio et mollis et mollis recuperare christifs Minimizes sonant et electrica sonitus in multis virtute switching, ita reducendo potentia damnum switching transistor
II features
Minimum damnum
Maximum efficientiam humilis deinceps voltage
princeps current facultatem princeps Surge capacitatem
Super ieiunium convaluisset tempora
High voltage
III Applications
Switching potentia copia
Power Switching Circuitus
Inverter potentia copia IV install
Recommendedtorque valorem (to-CCXLVII): 0.8 NM
Maxime torque valorem (to-CCXLVII): 1.2 NM
Vbr | VF (Single) (Max) | Si (VULGATE) (Single) |
300V | 1.15v | 30a |
60a 300v ieiunium recuperatio diode
I Description
60a, 300v usquequatfast Diodes habent humilem deinceps voltas gutta et de Planar, Silicon Nitride passivated, Ion-implantata, epitaxial constructione. His cogitationes in animo usu ut industria steering / clamping Diodes et rectifiers in varietate switching potentia commeatus et alia potentia switching applications. Minimum recuperatio et mollis et mollis recuperare christifs Minimizes sonant et electrica sonitus in multis virtute switching, ita reducendo potentia damnum switching transistor
II features
Minimum damnum
Maximum efficientiam humilis deinceps voltage
princeps current facultatem princeps Surge capacitatem
Super ieiunium convaluisset tempora
High voltage
III Applications
Switching potentia copia
Power Switching Circuitus
Inverter potentia copia IV install
Recommendedtorque valorem (to-CCXLVII): 0.8 NM
Maxime torque valorem (to-CCXLVII): 1.2 NM
Vbr | VF (Single) (Max) | Si (VULGATE) (Single) |
300V | 1.15v | 30a |