porta
Jiangsu Donghai Semiconductor Co., Ltd
Hic es: Home » Products » MOSFET » 400V-1500V N MOS » 8A 600V N-canali Enhancement Modus Potestatis MOSFET F8N60 TO-220F

loading

Share to:
facebook sharing button
Twitter sharing button
linea participatio puga
wechat sharing button
sharingin button sharing
pinterest sharing button
whatsapp sharing button
sharethis sharing button

8A 600V N-canali Enhancement Modus Power MOSFET F8N60 TO-220F

Haec N-canale vdmosfets aucta, a technologia plani auto-aligna fit
quae damnum conductionis minuit, emendare mutandi
effectum et NIVIS energiam augere. W
Availability:
Quantity:

8A 600V N-canali amplificatio Modus Power MOSFET


1 Description

Haec N-canale vdmosfets aucta, a technologia plani auto-aligna fit quae damnum conductionis minuit, emendare mutandi effectum et NIVIS energiam augere. Quod congruit cum RoHS vexillum. TO-220F praebet intentionem insulationem in 2000V RMS aestimatam ab omnibus tribus terminalibus calorum externorum. TO-220F series cum UL signis observare (File ref:E252906). 


2 Features 

Fast commutatione

ESD melius facultatem 

● Minimum resistente (Rdson≤1.2Ω) 

Minimum crimen (Typ: 24nC) 

Minimum contra facultates translationis (Typ: 5.5pF) 

C% unius pulsus NIVIS industria test 

C% VDS test


III Applications 

● In variis potentiae mutandi circuitionibus ad systema miniaturizationis et efficientiae altioris adhibitum. 

● Potestas transiens ambitum electronico adprehensis et adaptor.


VDSS  RDS(on)(TYP) ID 
600V 0.98Ω 8A



Priora: 
Next: 
  • Sign up for our newsletter
  • expediret pro futuro
    signo pro nostris newsletter accipere updates recta in capsa tua