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30A 60V SchottkyBarrdc8f6d4=SIC DIODE, China 650V-1700V SIC DIODE, 650V-1700V SIC DIODE Manufacturers, 650V-1700V SIC DIODE Suppliers

Dual centrum tab Schottky rectificatum aptum ad High Frequency server et telecom statio basis SMPS. Packaged in TO, haec fabrica altam currentem aestimationem et infimum volumen coniungit ad augendam tam constantiam quam vim densitatis applicationis.
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30A 60V SchottkyBarrierDiode


1 Description

Dual centrum tab Schottky rectificatum aptum ad High Frequency server et telecom statio basis SMPS. Packaged in TO, haec fabrica altam currentem aestimationem et infimum volumen coniungit ad augendam tam constantiam quam vim densitatis applicationis. TO-220F praebet intentionem insulationem in 2000V RMS aestimatam ab omnibus tribus terminalibus calorum externorum.


2 Features 

  •  Alta coniuncta temperatura capaciy 

  •  Humilis lacus current 

  •  Humilis scelerisque resistentia 

  •  Princeps frequency operatio 

  •  NIVIS NIVIS PECUNIA


III Applications 

  •  Switching Power 

  •  Power Switching Circuits 

  •  General Propositum


Vces RDS(on) (TYP) ID
60V 0.7mΩ 30A


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