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Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
Hic es: Home » Products » DIODE » 40V-200V SBD » 10A 200V SchottkyBarrierDiode MBRE10200CT TO-263

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10A 200V SchottkyBarrierDiode MBRE10200CT TO-263

Dual centrum tab Schottky rectificatum aptum ad High Frequency server et telecom statio basis SMPS.Packaged in TO Intra sarcina, haec
machina coniungit in alto currenti aestimationem et infimum volumen ad augendam tam firmitatem quam vim densitatis applicationis.
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  • MBRE10200CT

  • WXDH

10A 200V SchottkyBarrierDiode

1 Description

Dual centrum tab Schottky rectificatum aptum ad High Frequency server et telecom statio basis SMPS.Packaged in TO Intra sarcina, haec machina coniungit in alto currenti aestimationem et infimum volumen ad augendam tam firmitatem quam vim densitatis applicationis. 


2 Features 

  •  Alta coniuncta temperatura capaciy 

  •  Humilis lacus current 

  •  Humilis scelerisque resistentia 

  •  Princeps frequency operatio 

  •  NIVIS CASUS specification 


III Applications 

  •  Switching Power 

  •  Power Switching Circuits 

  •  Commune



VBR  VF(single)(Max) SI(AV)
200V 0.95V 5A


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SchottkyBarrierDiode

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