Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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DSD065N04LA TO-252

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
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  • DSD065N04LA

  • WXDH

40V/5.5mΩ/82A N-MOSFET


1 Description 

This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard. 


2 Features 

• AEC-Q101 qualified

● Low on resistance 

● Low reverse transfer capacitances

● 100% single pulse avalanche energy test 

● 100% ΔVDS test

● Pb-Free plating / Halogen-Free / RoHS compliant


3 Applications 

• Motor Control and Drive 

• Charge/Discharge for Battery Management System 

• Synchronous Rectifier for SMPS

• Automotive Application


VDSSRDS(on)(TYP)ID
40V5.5mΩ82A


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