Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
You are here: Home » Products » MOSFET » 400V-1500V N MOS » DJE660N80E TO-263

loading

Share to:
facebook sharing button
twitter sharing button
line sharing button
wechat sharing button
linkedin sharing button
pinterest sharing button
whatsapp sharing button
sharethis sharing button

DJE660N80E TO-263

These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. Which accords with the RoHS standard.
Availability:
Quantity:
  • DJG660N80E

  • WXDH

8A 800V N-channel Super Junction Power MOSFET


1 Description

These N-channel enhanced vdmosfets, is using advanced super junction technology and design to provide excellent Rdson with low gate charge. Which accords with the RoHS standard. 


2 Features 

● Very Low FOM (RDS(on) X Qg ) 

● Low on resistance

● Low gate charge 

● Low reverse transfer capacitances 

● Built-in ESD Diode 

● 100% single pulse avalanche energy test 

● 100% ΔVDS test


3 Applications

● Power factor correction(PFC). 

● Switched mode power supplies(SMPS). 

● Uninterruptible power supply(UPS). 

● AC to DC Converters 

● Telecom


VDSS  RDS(on)(TYP) ID 
800V 0.58Ω 8A



Previous: 
Next: 
  • Sign up for our newsletter
  • get ready for the future
    sign up for our newsletter to get updates straight to your inbox