Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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DHS044N12U TOLL PACKAGE

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
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  • DHS044N12U

  • WXDH

270A 120V N-channel Enhancement Mode Power MOSFET

1 Description 

This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard. 


2 Features 

● Low on resistance 

● Low gate charge 

● Fast switching

● Low reverse transfer capacitances

● 100% single pulse avalanche energy test 

● 100% ΔVDS test


3 Applications 

● Synchronous rectification in SMPS 

● Motor control and drive 

● Battery management

● UPS 

● Power tools


VDSS RDS(on)(TYP) ID
120V 2.7mΩ 270A


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